Edge effect on resistance scaling rules in graphene nanostructures
arXiv:1102.2681 · doi:10.1021/nl103966t
Abstract
We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover of the transport regimes possibly due to the drastic change of the edge effect.
Accepted by Nano Letters
References in corpus (27)
- The electronic properties of graphene
- Graphene: Status and Prospects
- Energy Band Gap Engineering of Graphene Nanoribbons
- Suspended Graphene: a bridge to the Dirac point
- Graphene Nano-Ribbon Electronics
- Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
- Tailoring the atomic structure of graphene nanoribbons by STM lithography
- Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
- Electron Transport in Disordered Graphene Nanoribbons
- Energy gaps in etched graphene nanoribbons
- Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
- Scaling of Resistance and Electron Mean Free Path of Single-Walled Carbon Nanotubes
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Demonstration of one-parameter scaling at the Dirac point in graphene
- Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
- Coulomb blockade in graphene nanoribbons
- Screening and interlayer coupling in multilayer graphene field-effect transistors
- Transport Length Scales in Disordered Graphene-based Materials: Strong Localization Regimes and Dimensionality Effects
- Disorder-induced gap behavior in graphene nanoribbons
- Theory of carrier transport in bilayer graphene
- Localized states at zigzag edges of bilayer graphene
- Electrostatic confinement of electrons in graphene nano-ribbons
- Theory of charged impurity scattering in two dimensional graphene
- Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
- Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons
- A new type of vacancy-induced localized states in multilayer graphene
- One Parameter Scaling Theory for Stationary States of Disordered Nonlinear Systems
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