Magnetotransport through graphene nanoribbons at high magnetic fields

Abstract

We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of disorder. In experiment, at high carrier densities we observe Shubnikov-de Haas oscillations and the quantum Hall effect, while at low densities the oscillations disappear and an initially negative magnetoresistance becomes strongly positive at high magnetic fields. The strong resistance increase at very high fields and low carrier densities is tentatively ascribed to a field-induced insulating state in the bulk graphene leads. Comparing numerical results and experiment, we demonstrate that at least edge disorder and bulk short-range impurities are important in our samples.

5 pages, 4 figures, revised version to match published version. First author changed her last name from Schmidmeier to Minke

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Cited by in corpus (6)

• Ballistic transport in graphene antidot lattices
• Characterizing wave functions in graphene nanodevices: electronic transport through ultrashort graphene constrictions on a boron nitride substrate
• Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons
• Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings
• Edge state transport through disordered graphene nanoribbons in the quantum Hall regime
• Quantum Hall effect in narrow graphene ribbons