Quantum Hall effect in narrow graphene ribbons

Abstract

The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a combined experimental and theoretical analysis, that this does not hold for the quantum Hall effect in narrow graphene ribbons. In our graphene Hall bar, which is only 60 nm wide, we observe the quantum Hall effect up to Landau level index k=2 and show within a zero free-parameter model that the spatial extent of the compressible and incompressible strips is of a similar magnitude as the magnetic length. We conclude that in narrow graphene ribbons the single-particle picture is a more appropriate description of the quantum Hall effect and that electrostatic effects are of minor importance.

RevTex, 5 pages, 4 figures (matches published version)

References in corpus (7)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
• Unveiling the Landau Levels Structure of Graphene Nanoribbons
• Generic suppression of conductance quantization of interacting electrons in graphene nanoribbons in a perpendicular magnetic field
• Magnetotransport through graphene nanoribbons at high magnetic fields
• Edge state transport through disordered graphene nanoribbons in the quantum Hall regime

Cited by in corpus (5)

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• Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
• Theory of the microwave impedance microscopy of Chern insulators
• Gate electrostatics and quantum capacitance in ballistic graphene devices
• Quantum Hall effect induced by electron-phonon interaction