Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach

Abstract

Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip. This charge inhomogeneity is especially important in the quantum Hall regime where we predict the doubling of the number of edge states and coexistence of two different types of such states. Applications to graphene-based nanoelectronics are discussed.

5 pages, 6 figures, Title changed due to Editor

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• Emergent Energy Dissipation in Quantum Limit
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Thermal dissipation in the quantum Hall regime in graphene
• Absence of edge reconstruction for quantum Hall edge channels in graphene devices
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• Exact solution of the 1D Dirac equation for the inverse-square-root potential $1/\sqrt{x}$
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• A New Class of Solvable Two-dimensional Scalar Potentials for Graphene
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• Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing
• Inverse square root level-crossing quantum two-state model
• Solvable Two-dimensional Dirac Equation with Matrix Potential: Graphene in External Electromagnetic Field
• Fabry-Perot and Aharonov-Bohm interference in ideal graphene nanoribbons
• Nonlinear Terahertz Resonances from Ballistic Electron Funnelling
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• Edge dependence of the Josephson current in the quantum Hall regime
• Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States