Interacting electrons in graphene nanoribbons in the lowest Landau level
arXiv:1104.5193 · doi:10.1103/PhysRevB.84.075407
Abstract
We study the effect of electron-electron interaction and spin on electronic and transport properties of gated graphene nanoribbons (GNRs) in a perpendicular magnetic field in the regime of the lowest Landau level (LL). The electron-electron interaction is taken into account using the Hartree and Hubbard approximations, and the conductance of GNRs is calculated on the basis of the recursive Greens function technique within the Landauer formalism. We demonstrate that, in comparison to the one-electron picture, electron-electron interaction leads to the drastic changes in the dispersion relation and structure of propagating states in the regime of the lowest LL showing a formation of the compressible strip and opening of additional conductive channels in the middle of the ribbon. We show that the latter are very sensitive to disorder and get scattered even if the concentration of disorder is moderate. In contrast, the edge states transport is very robust and can not be suppressed even in the presence of a strong spin-flipping.
6 pages, 3 figures
References in corpus (23)
- The electronic properties of graphene
- The structure of suspended graphene sheets
- Magnetism in graphene nano-islands
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Spin Filtered Edge States and Quantum Hall Effect in Graphene
- Magnetism in Disordered Graphene and Irradiated Graphite
- The zero-energy state in graphene in a high magnetic field
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Magnetic oscillations in planar systems with the Dirac-like spectrum of quasiparticle excitations II: transport properties
- Quantum-Hall activation gaps in graphene
- Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
- Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
- Electronic Structure of gated graphene and graphene ribbons
- Theory of the Magnetic-Field-Induced Insulator in Neutral Graphene
- Magneto-transport through graphene nano-ribbons
- Capacitance of graphene nanoribbons
- Metal to insulator transition on the N = 0 Landau level in graphene
- Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons
- Edge states, mass and spin gaps, and quantum Hall effect in graphene
- Transition from ballistic to diffusive behavior of graphene ribbons in the presence of warping and charged impurities
- Self-consistent calculation of electric potentials in Hall devices
- Generic suppression of conductance quantization of interacting electrons in graphene nanoribbons in a perpendicular magnetic field
- Quantum Hall conductance of two-terminal graphene devices
Cited by in corpus (10)
- Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons
- Noncollinear magnetic phases and edge states in graphene quantum Hall bars
- Realizing Universal Edge Properties in Graphene Fractional Quantum Hall Liquids
- Quantum Spin Hall Effect in Twisted Bilayer Graphene
- Effect of edge reconstruction and electron-electron interactions on quantum transport in graphene nanoribbons
- Interaction-induced enhancement of -factor in graphene
- Spin polarization and g-factor enhancement in graphene nanoribbons in magnetic field
- Gate electrostatics and quantum capacitance in ballistic graphene devices
- Insulating state in low-disorder graphene nanoribbons
- The Universal Edge Physics in Fractional Quantum Hall Liquids