Insulating state in low-disorder graphene nanoribbons
arXiv:1908.11079 · doi:10.1002/pssb.201900269
Abstract
We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of meV/T reaching values of up to at T.
arXiv comment6 pages, 6 figures
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