Fabrication of large addition energy quantum dots in graphene

Abstract

We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron current. This results in the in-situ formation of a clean and ultra-narrow constriction, which hosts one quantum dot, and occasionally a few quantum dots in series. Conductance spectroscopy indicates that individual quantum dots can possess an addition energy as large as 180 meV and a level spacing as large as 25 meV. Our technique has several assets: (i) the dot is suspended, thus the electrostatic influence of the substrate is reduced, and (ii) contamination is minimized, since the edges of the dot have only been exposed to the vacuum in the cryostat.

Improved version. To appear in Applied Physics Letters

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Chaotic Dirac billiard in graphene quantum dots
• Current-induced cleaning of graphene
• Energy gaps in etched graphene nanoribbons
• Strong coupling between single-electron tunneling and nano-mechanical motion
• Franck-Condon blockade in suspended carbon nanotube quantum dots
• Quantum phase transition in a single-molecule quantum dot
• Quantum dot behavior in graphene nanoconstrictions
• Transport properties of graphene in the high-current limit
• The environment of graphene probed by electrostatic force microscopy
• Observation of excited states in a graphene quantum dot
• Electron-Hole Crossover in Graphene Quantum Dots
• Electronic and optical properties of electromigrated molecular junctions

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• Spin States in Graphene Quantum Dots
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• Probing relaxation times in graphene quantum dots
• Quantum Interference in Graphene Nanoconstrictions
• Quantum Dots at Room Temperature carved out from Few-Layer Graphene
• Time-resolved charge detection in graphene quantum dots
• Transition to Landau Levels in Graphene Quantum Dots
• Electronic Excited States in Bilayer Graphene Double Quantum Dots
• Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios
• Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons
• Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning
• Graphene-based charge sensors
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• Graphene nanoribbons: relevance of etching process
• A Mechanically Tunable Quantum Dot in a Graphene Break Junction
• Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots
• Insulating state in low-disorder graphene nanoribbons