Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Abstract

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

References in corpus (4)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Quantum Dots at Room Temperature carved out from Few-Layer Graphene
• Characterizing wave functions in graphene nanodevices: electronic transport through ultrashort graphene constrictions on a boron nitride substrate
• Finite bias spectroscopy of a three-terminal graphene quantum dot in the multi-level regime

Cited by in corpus (5)

• Quantum Interference in Graphene Nanoconstrictions
• Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices
• Sequential electron transport and vibrational excitations in an organic molecule coupled to few-kayer graphene electrodes
• Spin switching via quantum dot spin valves
• Electric-field-driven conductance switching in encapsulated graphene nanogaps