85 citations · 295 across the 20 of their papers we have counts for
21 papers
Chips in the Flatland : 2D Semiconductors for Future Computing Electronic
Narin Trakarnvanich, Mitra Sanchali, Tong Su +6
As transistor scaling approaches its fundamental physical limits in the Angstrom era, two-dimensional (2D) semiconductors have emerged as the promising channel material candidates…
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Dasari Venkatakrishnarao, Abhishek Mishra, Yaoju Tarn +11
Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the in…
All-Electrical Layer-Spintronics in Altermagnetic Bilayer
Rui Peng, Jin Yang, Lin Hu +5
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme…
Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication
Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao +14
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but…
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…
Electrical control of valley polarized charged biexcitons in monolayer WS
Sarthak Das, Ding Huang, Ivan Verzhbitskiy +5
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulat…
Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
Chit Siong Lau, Sarthak Das, Ivan A. Verzhbitskiy +6
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of c…
Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Teymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee +11
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and o…
Ultrathick MAN(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Zhuoling Jiang +4
Recent discovery of ultrathick monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we comput…
Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection
Xukun Feng, Chit Siong Lau, Shi-Jun Liang +3
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be inc…
MAZ Family Heteorstructures: Promises and Prospects
Che Chen Tho, San-Dong Guo, Shi-Jun Liang +5
Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition meta…
Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman +16
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full…
Quantum Transport in Two-Dimensional WS with High-Efficiency Carrier Injection Through Indium Alloy Contacts
Chit Siong Lau, Jing Yee Chee, Yee Sin Ang +8
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semicond…
Toward Valley-coupled Spin Qubits
Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau +3
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could pote…
Single layer MoS2 nanoribbon field effect transistor
D. Kotekar-Patil, J. Deng, S. L. Wong +2
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 n…
Quantum Interference in Graphene Nanoconstrictions
Pascal Gehring, Hatef Sadeghi, Sara Sangtarash +7
We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The…
Conductance enlargement in pico-scale electro-burnt graphene nanojunctions
Hatef Sadeghi, Jan Mol, Chit Lau +3
Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of futu…
Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning
Paweł Puczkarski, Pascal Gehring, Chit S. Lau +5
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The smal…