Single layer MoS2 nanoribbon field effect transistor

Abstract

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias.

arXiv comment4 pages, 3 figures

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Cited by in corpus (6)

• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Quantum Transport in Two-Dimensional WS${}_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts
• Lattice-guided growth of dense arrays of aligned transition metal dichalcogenide nanoribbons with high catalytic reactivity
• Valley polarized current and resonant electronic transport in a non-uniform ${\mathbf{MoS}}_2$ zigzag nanoribbon
• Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides