615 citations · 1.1k across the 14 of their papers we have counts for
15 papers
Advances and opportunities for automated robotic preparation of 2D materials and fabrication of 2D heterostructures
S. Davari, D. L. Duong, T. Faltermeier +7
The mechanical exfoliation, transfer, and stacking of 2D atomic sheets from van der Waals crystals synergize to enable atomic layer-by-atomic layer engineering of 2D heterostructur…
Fabry-Perot Interference, g-factor Anisotropy, and Gate-Tunable Quantum dot in Chiral Tellurium Nanowires
Suresh Ghimire, Mohammad Hafijur Rahaman, Nathan Tanner Sawyers +8
Chiral materials with strong spin-orbit coupling offer a unique platform for exploring the interplay between topology, chirality, and quantum transport yet the quantum coherent reg…
Phase Coherent Transport in Two-Dimensional Tellurium Flakes
Mohammad Hafijur Rahaman, Nathan Sawyers, Mourad Benamara +5
Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabricatio…
Toward Valley-coupled Spin Qubits
Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau +3
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could pote…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons
Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong +1
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present…
Single layer MoS2 nanoribbon field effect transistor
D. Kotekar-Patil, J. Deng, S. L. Wong +2
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 n…
Electrical spin driving by -matrix modulation in spin-orbit qubits
Alessandro Crippa, Romain Maurand, Léo Bourdet +11
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opport…
Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Andrea Corna, Léo Bourdet, Romain Maurand +11
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A n…
Ballistic quantum transport through Ge/Si core/shell nanowires
D. Kotekar-Patil, B. -M. Nguyen, J. Yoo +2
We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Prot interference patterns as well as conductance plateaus at…
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil +10
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry se…
Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand +9
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to…
A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil +8
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complem…
Discrete Charging in Polysilicon Gates of Single Electron Transistors
Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam +4
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade…
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Enrico Prati, Marco De Michielis, Matteo Belli +14
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…