SOI technology for quantum information processing

Abstract

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.

4 pages, 13 figures, Invited contribution at IEDM 2016

References in corpus (7)

• Surface codes: Towards practical large-scale quantum computation
• The Physical Implementation of Quantum Computation
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Cited by in corpus (7)

• Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
• A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
• Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Gate reflectometry in dense quantum dot arrays
• Variability of hole spin qubits in planar Germanium