Variability of hole spin qubits in planar Germanium
arXiv:2507.04953 · doi:10.1103/mtky-93p1
Abstract
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum computation. However, spin-orbit coupling also enhances the sensitivity to electrical disorder, potentially increasing variability. In this work, we perform numerical simulations in a realistic device geometry to quantify the variability of the charge and spin properties of Ge qubits induced by charge traps at the SiGe/oxide interfaces. We show that while the variability of charge properties remains moderate, spin properties (g-factors and Rabi frequencies) show significant dispersion. We explore the implications of this variability for large-scale architectures, and provide guidelines to minimize variability both in terms of interface quality requirements and optimal operation strategies.
References in corpus (55)
- Quantum Computation with Quantum Dots
- Spins in few-electron quantum dots
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- A CMOS silicon spin qubit
- Computing with spin qubits at the surface code error threshold
- Universal control of a six-qubit quantum processor in silicon
- A four-qubit germanium quantum processor
- Silicon CMOS architecture for a spin-based quantum computer
- Strong spin-photon coupling in silicon
- The germanium quantum information route
- Silicon quantum processor unit cell operation above one Kelvin
- Electric Dipole Induced Spin Resonance in Quantum Dots
- Fast two-qubit logic with holes in germanium
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- A singlet triplet hole spin qubit in planar Ge
- Electrical spin driving by -matrix modulation in spin-orbit qubits
- Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
- Low-frequency spin qubit detuning noise in highly purified Si/SiGe
- Quantum tomography of an entangled three-spin state in silicon
- Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots
- Strong coupling between a photon and a hole spin in silicon
- Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
- A single hole spin with enhanced coherence in natural silicon
- High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
- A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
- Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power
- Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
- Operating semiconductor quantum processors with hopping spins
- Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
- The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
- Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
- Hole spin driving by strain-induced spin-orbit interactions
- Two-qubit logic between distant spins in silicon
- Coherent spin qubit shuttling through germanium quantum dots
- Universal control of four singlet-triplet qubits
- A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
- Two-qubit logic with anisotropic exchange in a fin field-effect transistor
- Semiconductor materials stacks for quantum dot spin qubits
- Variability of electron and hole spin qubits due to interface roughness and charge traps
- Hole spin manipulation in inhomogeneous and non-separable electric fields
- Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
- Low disorder and high valley splitting in silicon
- Probing resonating valence bonds on a programmable germanium quantum simulator
- SOI technology for quantum information processing
- Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
- Two-body Wigner molecularization in asymmetric quantum dot spin qubits
- Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
- Bounds to electron spin qubit variability for scalable CMOS architectures
- Geometry of the dephasing sweet spots of spin-orbit qubits
- Compromise-Free Scaling of Qubit Speed and Coherence
- A two-dimensional 10-qubit array in germanium with robust and localised qubit control
- Reducing disorder in Ge quantum wells by using thick SiGe barriers
- A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
- Dressed basis sets for the modeling of exchange interactions in double quantum dots