Variability of electron and hole spin qubits due to interface roughness and charge traps

Abstract

Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability of single qubit properties (Larmor and Rabi frequencies) due to disorder at the Si/SiO${}_2$ interface (roughness, charge traps) in metal-oxide-semiconductor devices. We consider both electron qubits (with synthetic spin-orbit coupling fields created by micro-magnets) and hole qubits (with intrinsic spin-orbit coupling). We show that charge traps are much more limiting than interface roughness, and can scatter Rabi frequencies over one order of magnitude. We discuss the implications for the design of spin qubits and for the choice of materials.

23 pages

References in corpus (10)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Orbital mechanisms of electron spin manipulation by an electric field
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Theory of electric dipole spin resonance in quantum dots: Mean field theory with Gaussian fluctuations and beyond
• Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps

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