Variability of electron and hole spin qubits due to interface roughness and charge traps

Abstract

Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability of single qubit properties (Larmor and Rabi frequencies) due to disorder at the Si/SiO${}_2$ interface (roughness, charge traps) in metal-oxide-semiconductor devices. We consider both electron qubits (with synthetic spin-orbit coupling fields created by micro-magnets) and hole qubits (with intrinsic spin-orbit coupling). We show that charge traps are much more limiting than interface roughness, and can scatter Rabi frequencies over one order of magnitude. We discuss the implications for the design of spin qubits and for the choice of materials.

arXiv comment23 pages

References in corpus (61)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Silicon Quantum Electronics
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A single-atom electron spin qubit in silicon
• A programmable two-qubit quantum processor in silicon
• Electron spin coherence exceeding seconds in high purity silicon
• A CMOS silicon spin qubit
• 1/f noise: implications for solid-state quantum information
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Quantum CNOT Gate for Spins in Silicon
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• A four-qubit germanium quantum processor
• The germanium quantum information route
• Silicon quantum processor unit cell operation above one Kelvin
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Fidelity benchmarks for two-qubit gates in silicon
• Qubits made by advanced semiconductor manufacturing
• Orbital mechanisms of electron spin manipulation by an electric field
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Universal quantum logic in hot silicon qubits
• Coherent single electron spin control in a slanting Zeeman field
• Fast two-qubit logic with holes in germanium
• Ge hole spin qubit
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• A single-hole spin qubit
• Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Spin-orbit coupling and operation of multi-valley spin qubits
• Theory of electric dipole spin resonance in quantum dots: Mean field theory with Gaussian fluctuations and beyond
• Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Micro-magnets for coherent control of spin-charge qubit in lateral quantum dots
• Valley dependent anisotropic spin splitting in silicon quantum dots
• Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches
• Electron g-factor of valley states in realistic silicon quantum dots
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Electric-field tuning of the valley splitting in silicon corner dots
• Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
• Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
• Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps

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• Hole spin manipulation in inhomogeneous and non-separable electric fields
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• Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach
• The Quantum House Of Cards
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of $1/f$ noise in high-quality qubits
• Entangling gates on degenerate spin qubits dressed by a global field
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Gate reflectometry in dense quantum dot arrays
• Path integral simulation of exchange interactions in CMOS spin qubits
• Optimal operation of hole spin qubits
• Polarimetry With Spins in the Solid State
• Variability of hole spin qubits in planar Germanium
• Enhanced local addressability of a spin array with local exchange pulses and global microwave driving