615 citations · 2.2k across the 39 of their papers we have counts for
39 papers
A quantum dot-based frequency multiplier
G. A. Oakes, L. Peri, L. Cochrane +8
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are requ…
Probing charge noise in few electron CMOS quantum dots
Cameron Spence, Bruna Cardoso-Paz, Vincent Michal +14
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qu…
Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
G. A. Oakes, V. N. Ciriano-Tejel, D. Wise +18
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Quantum Dot-Based Parametric Amplifiers
Laurence Cochrane, Theodor Lundberg, David J. Ibberson +8
Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recentl…
Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
Theodor Lundberg, David J. Ibberson, Jing Li +12
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…
Gate reflectometry in dense quantum dot arrays
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele +12
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the…
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal +8
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the m…
Remote capacitive sensing in two-dimension quantum-dot arrays
Jingyu Duan, Michael A. Fogarty, James Williams +3
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI…
Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
Will Gilbert, Andre Saraiva, Wee Han Lim +8
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum comput…
Charge detection in an array of CMOS quantum dots
Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand +15
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays…
Single-electron control in a foundry-fabricated two-dimensional qubit array
Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi +4
Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A…
Large dispersive interaction between a CMOS double quantum dot and microwave photons
David J. Ibberson, Theodor Lundberg, James A. Haigh +11
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped…
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Léo Bourdet, Louis Hutin, Benoit Bertrand +14
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
Si CMOS Platform for Quantum Information Processing
L. Hutin, R. Maurand, D. Kotekar-Patil +7
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact tw…
Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna +9
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at ver…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
Theodor Lundberg, Jing Li, Louis Hutin +12
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has p…