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physics.app-ph2019★ 39 cited
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
physics.app-ph2018
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…