28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

References in corpus (3)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Storing quantum information for 30 seconds in a nanoelectronic device
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Cited by in corpus (5)

• Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
• Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
• Revised theoretical limit of subthreshold swing in field-effect transistors
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method