Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
arXiv:2407.04501 · doi:10.1063/5.0250428
Abstract
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (E_BD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong dependence of HfO2 cryogenic performance on the ALD growth temperature, while the latter shows a negligible impact on Al2O3. We estimated a ~9 % and ~14 % reduction of the relative permittivity of HfO2 and Al2O3, respectively, from 300 K to 3 K. Additionally, we designed and fabricated Al2O3/HfO2 bilayers and we checked their properties at cryogenic temperatures. The study also investigates the impact of the patterning method, namely, UV or electron-beam lithography (acceleration voltage of 10, 20, or 30 kV), on the high-k dielectric properties.
arXiv comment17 pages, 4 figures, supporting information at the end of the paper
References in corpus (20)
- Quantum Computing
- Controlling the spontaneous emission of a superconducting transmon qubit
- A Semiconductor Nanowire-Based Superconducting Qubit
- Transmon qubit with relaxation time exceeding 0.5 milliseconds
- Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
- Superconducting Gatemon Qubit based on a Proximitized Two-Dimensional Electron Gas
- Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
- Cryogenic Memory Technologies
- Life after charge noise: recent results with transmon qubits
- Gate Tunable Josephson Diode in Proximitized InAs Supercurrent Interferometers
- Gatemon Benchmarking and Two-Qubit Operation
- Germanium quantum well Josephson field effect transistors and interferometers
- 28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
- Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications
- Gate-tunable, superconductor-semiconductor parametric amplifier
- Tuning supercurrent in Josephson field effect transistors using h-BN dielectric
- Dynamical vortex transitions in a gate-tunable Josephson junction array
- Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions
- Spin-resolved spectroscopy using a quantum dot defined in InAs 2DEG
- Estimation of the FR4 Microwave Dielectric Properties at Cryogenic Temperature for Quantum-Chip-Interface PCBs Design