Spin-resolved spectroscopy using a quantum dot defined in InAs 2DEG

Abstract

We realize a device, based on InAs two-dimensional electron gas proximitized by superconducting Al, which allows a single quantum dot level to be used as a spectrometer of the density of states in a nanowire. Applying a magnetic field parallel to the plane of the device causes the levels of the dot to split, enabling spin resolved spectroscopy. Using this method, we are able to study the spin and charge polarization of the allowed transport through sub-gap states which form in the nanowire and evolve with varying magnetic field and gate voltage.

References in corpus (12)

• Epitaxy of Semiconductor-Superconductor nanowires
• Scaling of Majorana Zero-Bias Conductance Peaks
• Zeeman energy and spin relaxation in a one-electron quantum dot
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction
• Tuning Yu-Shiba-Rusinov States in a Quantum Dot
• Semiconductor few-electron quantum dot operated as a bipolar spin filter
• Topological Phase Detection in Rashba Nanowires with a Quantum Dot
• Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots
• Nonlocal conductance spectroscopy of Andreev bound states in gate-defined InAs/Al nanowires
• Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits
• Spectroscopy of the local density-of-states in nanowires using integrated quantum dots

Cited by in corpus (10)

• Spin-filtered measurements of Andreev bound states
• Subgap states in semiconductor-superconductor devices for quantum technologies: Andreev qubits and minimal Majorana chains
• Many-body quantum dynamics of spin-orbit coupled Andreev states in a Zeeman field
• Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
• Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics
• Thouless pumping in Josephson junction arrays
• Exploring the energy spectrum of a four-terminal Josephson junction: Towards topological Andreev band structures
• Spin-resolved nonlocal transport in proximitized Rashba nanowires
• Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions
• Revisiting the Poor Man's Majoranas: The Spin-Exchange Induced Spillover Effect