Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
arXiv:1410.2563 · doi:10.1021/nl502603d
Abstract
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
published in Nano Letters ASAP
References in corpus (5)
Cited by in corpus (18)
- Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
- Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
- High Current Density in Monolayer MoS Doped by AlO
- Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
- Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
- Carrier Transport at the Metal-MoS2 Interface
- Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
- Doped-MoSe2 nanoflakes/3d metal oxide-hydr(oxy)oxides hybrid catalysts for pH-universal electrochemical hydrogen evolution reaction
- Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
- The Role of Transport Agents in MoS2 Single Crystals
- Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors
- Photoresponse of atomically thin MoS2 layers and their planar heterojunctions
- Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
- Chlorine doping of MoSe2 flakes by ion implantation
- Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities
- Growth and applications of two-dimensional single crystals
- Contact-induced doping in aluminum-contacted molybdenum disulfide
- Proximity induced spin-valley polarization in silicene/germanene on F-doped WS