Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Abstract

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

arXiv commentpublished in Nano Letters ASAP

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• Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
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• High Current Density in Monolayer MoS${}_2$ Doped by AlO${}_x$
• Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $Mo{S}_2$ by Amorphous $Ti{O}_x$ Encapsulation
• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
• Minimizing Residues and Strain in 2D Materials Transferred from PDMS
• Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
• Strain-Enhanced Mobility of Monolayer MoS2
• Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
• A WSe2 vertical field emission transistor
• Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
• Carrier Transport at the Metal-MoS2 Interface
• Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
• S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities
• Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
• Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance
• Novel doping alternatives for single-layer transition metal dichalcogenides
• Doped-MoSe2 nanoflakes/3d metal oxide-hydr(oxy)oxides hybrid catalysts for pH-universal electrochemical hydrogen evolution reaction
• Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• Single layer MoS2 nanoribbon field effect transistor
• The Role of Transport Agents in MoS2 Single Crystals
• Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors
• Superconductivity in the metastable 1T' and 1T''' phases of MoS${}_2$ crystals
• Enhancing Multifunctionalities of Transition Metal Dichalcogenide Monolayers via Intercalation of Molecules and Ions
• Photoresponse of atomically thin MoS2 layers and their planar heterojunctions
• Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface
• Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
• Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
• Chlorine doping of MoSe2 flakes by ion implantation
• Near Unity Molecular Doping Efficiency in Monolayer MoS2
• Design Rules for High Performance Tunnel Transistors from 2D Materials
• Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact
• Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs
• Variation of photoluminescence spectral line shape of monolayer WS2
• Density Functional Theory based Study of Chlorine Doped WS2-metal Interface
• CVD Graphene Contacts for Lateral Heterostructure MoS${}_2$ Field Effect Transistors
• Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
• Broadband ultra-high transmission of terahertz radiation through monolayer MoS${}_2$
• Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities
• Low-Temperature 2D/2D Ohmic Contacts in WSe${}_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition
• Growth and applications of two-dimensional single crystals
• Contact-induced doping in aluminum-contacted molybdenum disulfide
• Proximity induced spin-valley polarization in silicene/germanene on F-doped WS${}_2$
• Room-temperature superparamagnetism due to giant magnetic anisotropy in Mo${}_S$ defected single-layer MoS${}_2$
• Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS${}_2$ Heterostructures at Room Temperature
• Electrical contact properties between Yb and few-layer WS${}_2$
• Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe${}_2$ FETs
• Orientation- and pressure-dependence of the vibrational response of a monolayer crystal on a vicinal diamond surface