Ab-initio study on the possible doping strategies for MoS monolayers
arXiv:1304.8056 · doi:10.1103/PhysRevB.88.075420
Abstract
Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS conduction band, making the system n-type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species.
9 Pages, 12 figures
References in corpus (7)
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Substrate-induced band gap opening in epitaxial graphene
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- A self-consistent theory for graphene transport
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- Magnetism in MoS2 induced by MeV proton irradiation
- Ab initio study of bilateral doping within the MoS2-NbS2 system
Cited by in corpus (44)
- Two dimensional semiconductors with possible high room temperature mobility
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
- Stability and dopability of native defects and group-V and -VII impurities in single-layer MoS2
- Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2
- Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
- Novel doping alternatives for single-layer transition metal dichalcogenides
- Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
- Roadmap for Photonics with 2D Materials
- Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors
- All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
- Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
- Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation
- Superconducting dome in MoS2 and TiSe2 generated by quasiparticle-phonon coupling
- Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe
- Stability of charged sulfur vacancies in 2D and bulk MoS from plane-wave density functional theory with electrostatic corrections
- Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides
- Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe2
- Spin susceptibility of two-dimensional transition metal dichalcogenides
- Variation of photoluminescence spectral line shape of monolayer WS2
- Phase Stability and Raman/IR Signatures of Ni-Doped MoS from Density-Functional Theory Studies
- Itinerant Ferromagnetism in p-doped Monolayers of MoS2
- Density Functional Theory based Study of Chlorine Doped WS2-metal Interface
- DFT study of itinerant ferromagnetism in -doped monolayers of MoS
- Symmetries and hybridization in the indirect interaction between magnetic moments in MoS nanoflakes
- Understanding interface properties in 2D heterostructure FETs
- Enhanced interlayer interactions in Ni-doped MoS, and structural and electronic signatures of doping site
- Proximity induced spin-valley polarization in silicene/germanene on F-doped WS
- Noncollinear exchange interaction in transition metal dichalcogenide edges
- Modulation of electronic and thermal proprieties of TaMoS by controlling the repulsive interaction between Ta dopant atoms
- Long range of indirect exchange interaction on the edges of MoS flakes
- Prediction of low energy phase transition in metal doped MoTe from first principle calculations
- Structure, Thermodynamics, and Raman Spectroscopy of Rhenium-Doped Bulk MoS from First Principles
- Unveiling the multi-level structure of midgap states in Sb-doped MoX (X = S, Se, Te) monolayers
- A DFT study of the structural and electronic properties of single and double acceptor dopants in MX2 monolayers
- Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe
- Large enhancement of infrared absorption due to trimer comprised of doping-N and S-S divacancies in the imperfect monolayer MoS2: A first-principles study
- Machine Learning Interatomic Potentials Enable Molecular Dynamics Simulations of Doped MoS2
- Electron density control in tungsten diselenide monolayers via photochlorination
- Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements
- Theoretical insight into the interaction of O2 and H2O molecules with the perfect and the defective InSe monolayers
- p-type doping in CVD grown MoS2 using Nb
- MoS2 Nanoribbons Thermoelectric Generators
- First-principles study of the impact of As doping on the structural and electronic properties of MoS monolayer