Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$

Abstract

In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe${}_2$. Electron spin resonance measurements show that this dopant carries a spin with long-lived nanoseconds coherence time. Using scanning tunneling spectroscopy, we find that the hydrogenic wavefunctions associated with the dopant levels have characteristics spatial modulations that result from their hybridization to the \textbf{Q}-valleys of the conduction band. From a Fourier analysis of the conductance maps, we find that the amplitude and phase of the Fourier components change with energy according to the different irreducible representations of the impurity-site point-group symmetry. These results demonstrate that a dopant can inherit the locked spin-valley properties of the semiconductor and so exhibit long spin-coherence time.

arXiv commentMain text : 20 pages, 5 figures. Supplementary : 21 pages, 16 figures

References in corpus (43)

• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Excitons in atomically thin transition metal dichalcogenides
• Silicon Quantum Electronics
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Topological Surface States Protected From Backscattering by Chiral Spin Texture
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
• Magic continuum in twisted bilayer WSe2
• Topological insulators in twisted transition metal dichalcogenide homobilayers
• Hubbard model physics in transition metal dichalcogenide moiré bands
• Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
• Ab-initio study on the possible doping strategies for MoS${}_2$ monolayers
• Hidden spin polarization in inversion-symmetric bulk crystals
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
• Continuous Mott transition in semiconductor moiré superlattices
• Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
• Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
• Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
• Gate controlled spin-valley locking of resident carriers in WSe2 monolayers
• Magnetism in Semiconducting Molybdenum Dichalcogenides
• Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
• Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2
• Experimental observation of hidden Berry curvature in inversion-symmetric bulk 2H-WSe2
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Universal Quantum Computing with Spin and Valley
• Revealing Hidden Orbital Pseudospin Texture with Time-Reversal Dichroism in Photoelectron Angular Distributions
• Novel doping alternatives for single-layer transition metal dichalcogenides
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction
• Observation of intervalley quantum interference in epitaxial monolayer WSe2
• Spin coherence and dephasing of localized electrons in monolayer MoS${}_2$
• Valley qubit in gated MoS${}_2$ monolayer quantum dot
• Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
• Spin-valley density wave in moiré materials
• Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Spin States Protected from Intrinsic Electron-Phonon-Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe${}_2$
• Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides
• Valley interference and spin exchange at the atomic scale in silicon
• Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides
• Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe${}_2$