Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides

Abstract

Intervalley scattering by atomic defects in monolayer transition metal dichalcogenides (TDMs; MX2) presents a serious obstacle for applications exploiting their unique valley-contrasting properties. Here, we show that the symmetry of the atomic defects can give rise to an unconventional protection mechanism against intervalley scattering in monolayer TMDs. The predicted defect-dependent selection rules for intervalley scattering can be verified via Fourier transform scanning tunneling spectroscopy (FT-STS), and provide a unique identification of, e.g., atomic vacancy defects (M vs X). Our findings put the absence of the intervalley FT-STS peak in recent experiments in a different perspective.

arXiv comment7 pages, 4 figures + supplementary. Published version

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• Valley qubit in gated MoS${}_2$ monolayer quantum dot
• Direct Observation of Valley Coupled Topological Current in MoS${}_2$
• Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
• Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study
• Ab initio electron-defect interactions using Wannier functions
• Signatures of adatom effects in the quasiparticle spectrum of Li-doped graphene
• Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$