150 citations · 1.1k across the 33 of their papers we have counts for
33 papers
Two-dimensional to bulk crossover of the WSe electronic band structure
Patrick Le Fèvre, Raphaël Salazar, Matthieu Jamet +8
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions…
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Anis Chiout, Agnès Tempez, Thomas Carlier +9
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study,…
Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Ankita Ram, Krishna Maity, Cédric Marchand +10
In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits…
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis +11
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over mo…
Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer +9
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low…
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe
Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh +11
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among th…
Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe/ferromagnet heterostructures
K. Abdukayumov, M. Mičica, F. Ibrahim +19
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwid…
Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe
Valeria Sheina, Guillaume Lang, Vasily Stolyarov +14
In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal d…
Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Quentin Guillet, Libor Vojacek, Djordje Dosenovic +16
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for th…
Unidirectional Rashba Spin Splitting in Single Layer WSSe alloy
Jihene Zribi, Debora Pierucci, Federico Bisti +12
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, int…
Visualizing giant ferroelectric gating effects in large-scale WSe/BiFeO heterostructures
Raphaël Salazar, Sara Varotto, Céline Vergnaud +13
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize m…
Flat band and Lifschitz transition in long-range ordered supergraphene obtained by Erbium intercalation
A. Zaarour, V. Malesys, J. Teyssandier +10
Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first…
Electroluminescence of monolayer WS in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light
Ricardo Javier Peña Román}, Delphine Pommier, Rémi Bretel +12
Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS). Excitonic electroluminescence is measur…
Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy
Debora Pierucci, Aymen Mahmoudi, Mathieu Silly +10
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we rep…
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy
Lama Khalil, Debora Pierucci, Emilio Velez +9
Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use…
High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
Frédéric Bonell, Alain Marty, Céline Vergnaud +5
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth…
Dynamical Coulomb blockade under a temperature bias
H. Duprez, F. Pierre, E. Sivre +8
We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A bro…
Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys
Cyrine Ernandes, Lama Khalil, Hela Almabrouk +12
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a…
Macroscopic electron quantum coherence in a solid-state circuit
H. Duprez, E. Sivre, A. Anthore +5
The quantum coherence of electronic quasiparticles underpins many of the emerging transport properties of conductors at small scales. Novel electronic implementations of quantum op…
Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection
Julien Chaste, Amine Missaoui, Amina Saadani +4
The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspe…
Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals
Hugo Henck, Debora Pierucci, Jihene Zribi +12
Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has at…
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Debora Pierucci, Jihene Zribi, Hugo Henck +11
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or i…
Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
Hugo Henck, Zeineb Ben Aziza, Debora Pierucci +13
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of co…
Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Hugo Henck, Zeineb Ben Aziza, Olivia Zill +15
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic…