739 citations · 843 across the 5 of their papers we have counts for
5 papers
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang, Kausik Majumdar, Han Liu +8
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecula…
High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)
Lingming Yang, Kausik Majumdar, Yuchen Du +8
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (name…
Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Jiangjiang J. Gu, Xinwei Wang, Heng Wu +2
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an…
20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
J. J. Gu, X. W. Wang, H. Wu +5
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equiva…
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Jiangjiang J. Gu, Heng Wu, Yiqun Liu +3
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport propertie…