Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Jiangjiang J. Gu, Xinwei Wang, Heng Wu +2

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an…