Strain-Enhanced Mobility of Monolayer MoS2

Abstract

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors.

References in corpus (13)

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Cited by in corpus (13)

• CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors
• Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides
• How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS${}_2$ Transistors?
• Strain-induced activation of chiral-phonon emission in monolayer WS${}_2$
• The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
• Quantification of 2D Interfaces: Quality of heterostructures, and what is inside a nanobubble
• Geometrical properties of strained and twisted moiré heterostructures
• Strained 2D TMD lateral heterojunctions via grayscale thermal-Scanning Probe Lithography
• Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
• Electron correlation in semiconductors and insulators via symbolic regression
• Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous In-plane Strain
• Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain
• Dislocation Patterning as a Mechanism for Flat Band Formation