Dislocation Patterning as a Mechanism for Flat Band Formation
arXiv:2504.07899 · doi:10.1103/PhysRevB.111.155116
Abstract
We compute the second-order correction to the electronic dispersion relation of a free electron gas interacting with an effective electron-dislocation potential, derived from a modern quantized theory of dislocations. Our results demonstrate that dislocation patterning induces anisotropic flat bands in the electronic dispersion under specific strain fields and directions, referred to as ``magic'' parameters. These flat bands acquire non-zero curvature as the strain or direction deviates from these magic parameters.
References in corpus (9)
- Fractional Quantum Hall Effect in Topological Flat Bands with Chern Number Two
- Effective theory and emergent symmetry in the flat bands of attractive Hubbard models
- A 3D phase field dislocation dynamics model for body-centered cubic crystals
- Topological origin of flat-bands as pseudo-Landau levels in uniaxial strained graphene nanoribbons and induced magnetic ordering due to electron-electron interactions
- Scattering of phonons by quantum dislocations segments in an elastic continuum
- Origami-controlled strain engineering of tunable flat bands and correlated states in folded graphene
- Automated atomistic simulations of dissociated dislocations with ab initio accuracy
- Time-reversal symmetry breaking from lattice dislocations in superconductors
- Flat bands and superconductivity induced by periodic strain in monolayer graphene