Topological exact flat bands in two dimensional materials under periodic strain
arXiv:2211.11618 · doi:10.1103/PhysRevLett.130.216401
Abstract
We study flat bands and their topology in 2D materials with quadratic band crossing points (QBCPs) under periodic strain. In contrast to Dirac points in graphene, where strain acts as a vector potential, strain for QBCPs serves as a director potential with angular momentum . We prove that when the strengths of the strain fields hit certain ``magic" values, exact flat bands with emerge at charge neutrality point in the chiral limit, in strong analogy to magic angle twisted bilayer graphene. These flat bands have ideal quantum geometry for the realization of fractional Chern insulators, and they are always fragile topological. The number of flat bands can be doubled for certain point group, and the interacting Hamiltonian is exactly solvable at integer fillings. We further demonstrate the stability of these flat bands against deviations from the chiral limit, and discuss possible realization in 2D materials.
References in corpus (10)
- The electronic properties of graphene
- Topological Insulators and Nematic Phases from Spontaneous Symmetry Breaking in 2D Fermi Systems with a Quadratic Band Crossing
- Electronic properties of bilayer and multilayer graphene
- Theoretical prediction of a strongly correlated Dirac metal
- Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
- Topological and stacked flat bands in bilayer graphene with a superlattice potential
- Engineering geometrically flat Chern bands with Fubini-Study Kähler structure
- Adiabatic continuity between Hofstadter and Chern insulator states
- Excitonic Laughlin States in Ideal Topological Insulator Flat Bands and Possible Presence in Moiré Superlattice Materials
- Network model for periodically strained graphene
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- Fractional Chern insulator candidate in twisted bilayer checkboard lattice
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- A generalized framework for straintronics in 2D quantum materials using group theory
- Unconventional Fractional Phases in Multi-Band Vortexable Systems
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