activity
20202025
most citedHigh-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

235 citations · 786 across the 11 of their papers we have counts for

collaborators

13 papers

physics.app-ph2025

Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS

Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7

Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…

cond-mat.mtrl-sci2025★ 6 cited

Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration

Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7

Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…

cond-mat.mtrl-sci2025★ 20 cited

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…

physics.app-ph2024★ 22 cited

Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…

physics.app-ph2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…

cond-mat.mtrl-sci2024★ 23 cited

Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif +11

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dan…

cond-mat.mes-hall2023★ 2 cited

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel +11

Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attribu…

physics.app-ph2023★ 28 cited

Efficiency Limit of Transition Metal Dichalcogenide Solar Cells

Koosha Nassiri Nazif, Frederick U. Nitta, Alwin Daus +2

Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorpti…

physics.app-ph2023★ 49 cited

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Lukas Völkel, Dennis Braun, Melkamu Belete +8

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…

cond-mat.mtrl-sci2022★ 175 cited

Strain-Enhanced Mobility of Monolayer MoS2

Isha M. Datye, Alwin Daus, Ryan W. Grady +3

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently…

cond-mat.mtrl-sci2021★ 6 cited

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Sumaiya Wahid, Alwin Daus, Asir Intisar Khan +4

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory ap…

physics.app-ph2021★ 220 cited

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Koosha Nassiri Nazif, Alwin Daus, Jiho Hong +13

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirabl…

cond-mat.mtrl-sci2020★ 235 cited

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Alwin Daus, Sam Vaziri, Victoria Chen +7

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flex…