High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.

References in corpus (4)

• Channel Length Scaling of MoS2 MOSFETs
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
• High Current Density in Monolayer MoS${}_2$ Doped by AlO${}_x$
• Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

Cited by in corpus (9)

• High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
• Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers
• Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
• Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
• Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization
• Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature
• High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
• Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides
• Substrate-Dependence of Monolayer MoS${}_2$ Thermal Conductivity and Thermal Boundary Conductance