416 citations · 2.5k across the 21 of their papers we have counts for
22 papers
Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
A. D. Smith, S. Vaziri, S. Rodriguez +2
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semi…
Strain-Enhanced Mobility of Monolayer MoS2
Isha M. Datye, Alwin Daus, Ryan W. Grady +3
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently…
Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure
V. Z. Costa, Liangbo Liang, Sam Vaziri +3
We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a com…
High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
Koosha Nassiri Nazif, Alwin Daus, Jiho Hong +13
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirabl…
Chemical vapor deposited graphene: From synthesis to applications
Satender Kataria, Stefan Wagner, Jasper Ruhkopf +7
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor dep…
High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides
Alwin Daus, Sam Vaziri, Victoria Chen +7
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flex…
Ultrahigh Doping of Graphene Using Flame-Deposited MoO3
Sam Vaziri, Victoria Chen, Lili Cai +5
The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported…
Uncovering the Effects of Metal Contacts on Monolayer MoS2
Kirstin Schauble, Dante Zakhidov, Eilam Yalon +11
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between se…
Electron Transport across Vertical Silicon / MoS / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Melkamu Belete, Olof Engström, Sam Vaziri +4
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS) and graphene are investigated with respect to the vertical current conduction mechanism. The measured…
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Melkamu Belete, Satender Kataria, Aykut Turfanda +4
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…
Thermal Transport Across Graphene Step Junctions
Miguel Munoz Rojo, Zuanyi Li, Charles Sievers +8
Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. He…
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors
Anderson D. Smith, Frank Niklaus, Alan Paussa +9
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentall…
Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout
Anderson David Smith, Karim Elgammal, Frank Niklaus +11
We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si waf…
Going Ballistic: Graphene Hot Electron Transistors
Sam Vaziri, Anderson D. Smith, Mikael Östling +11
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…
Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors
Sam Vaziri, Melkamu Belete, Eugenio Dentoni Litta +4
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. I…
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Grzegorz Lupina, Julia Kitzmann, Ioan Costina +15
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform mus…
Static Non-linearity in Graphene Field Effect Transistors
Saul Rodriguez, Anderson Smith, Sam Vaziri +3
The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD…
A Comprehensive Graphene FET Model for Circuit Design
Saul Rodriguez, Sam Vaziri, Anderson Smith +4
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electron…
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
A. D. Smith, F. Niklaus, A. Paussa +9
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively de…
A Graphene-based Hot Electron Transistor
Sam Vaziri, Grzegorz Lupina, Christoph Henkel +6
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially comp…
A Simple Route towards High-Concentration Surfactant-Free Graphene Dispersions
Jiantong Li, Fei Ye, Sam Vaziri +3
A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graph…
RF Performance Projections of Graphene FETs vs. Silicon MOSFETs
Saul Rodriguez, Sam Vaziri, Mikael Ostling +3
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio fre…