activity
20152021
most citedResidual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

294 citations · 621 across the 6 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2021

Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure

V. Z. Costa, Liangbo Liang, Sam Vaziri +3

We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a com…

physics.app-ph2021110 cited

Chemical vapor deposited graphene: From synthesis to applications

Satender Kataria, Stefan Wagner, Jasper Ruhkopf +7

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor dep…

cond-mat.mes-hall202021 cited

Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

Sam Vaziri, Victoria Chen, Lili Cai +5

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported…

cond-mat.mtrl-sci2020

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Kirstin Schauble, Dante Zakhidov, Eilam Yalon +11

Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between se…

physics.app-ph2019

Electron Transport across Vertical Silicon / MoS / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors

Melkamu Belete, Olof Engström, Sam Vaziri +4

Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS) and graphene are investigated with respect to the vertical current conduction mechanism. The measured…

physics.app-ph201936 cited

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Melkamu Belete, Satender Kataria, Aykut Turfanda +4

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…