Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
arXiv:1911.06032 · doi:10.1002/aelm.201900892
Abstract
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS and chrome / gold metal electrodes. Electrical characterizations reveal a bipolar and forming free switching process with stable retention for at least 2500 seconds. Controlled experiments carried out in ambient and vacuum conditions suggest that the observed resistive switching is based on hydroxyl ions (OH). These originate from catalytic splitting of adsorbed water molecules by MoS. Experimental results in combination with analytical simulations further suggest that electric field driven movement of the mobile OH ions along the vertical MoS layers influences the energy barrier at the Si/MoS interface. The scalable and semiconductor production compatible device fabrication process used in this work offers the opportunity to integrate such memristors into existing silicon technology for future neuromorphic applications. The observed ion-based plasticity may be exploited in ionicelectronic devices based on TMDs and other 2D materials for memristive applications.
References in corpus (8)
- Atomically thin MoS2: A new direct-gap semiconductor
- Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2
- Robust memristors based on layered two-dimensional materials
- Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
- A Survey of Memristive Threshold Logic Circuits
- Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization
- Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional MoS
- Dimensional cross-over of the bandgap transition in quasi-two-dimensional MoS2