activity
20152024
most citedResistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

334 citations · 1.8k across the 25 of their papers we have counts for

collaborators

26 papers

physics.app-ph2024★ 9 cited

Reducing the metal-graphene contact resistance through laser-induced defects

Vikas Jangra, Satender Kataria, Max C. Lemme

Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specifi…

physics.app-ph2023★ 49 cited

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Lukas Völkel, Dennis Braun, Melkamu Belete +8

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…

cond-mat.mes-hall2022★ 6 cited

Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

Himadri Pandey, Jorge Daniel Aguirre Morales, Satender Kataria +6

We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) g…

cond-mat.mtrl-sci2022★ 73 cited

Contact Resistance Study of Various Metal Electrodes with CVD Graphene

Amit Gahoi, Stefan Wagner, Andreas Bablich +3

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying…

physics.app-ph2022★ 19 cited

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Sebastian Wittmann, Stephan Pindl, Simon Sawallich +6

Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate…

physics.app-ph2022★ 25 cited

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Jasper Ruhkopf, Simon Sawallich, Michael Nagel +6

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D…

cond-mat.mtrl-sci2021★ 37 cited

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl +8

Platinum diselenide (PtSe) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a sc…

physics.app-ph2021★ 110 cited

Chemical vapor deposited graphene: From synthesis to applications

Satender Kataria, Stefan Wagner, Jasper Ruhkopf +7

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor dep…

physics.app-ph2021★ 30 cited

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu +6

Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and op…

physics.app-ph2020★ 31 cited

Dependable contact related parameter extraction in graphene-metal junctions

Amit Gahoi, Satender Kataria, Francesco Driussi +5

The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R) are still open issues in graphene technology. Here, we demonstrate t…

physics.app-ph2020

Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

Sarah Riazimehr, Melkamu Belete, Satender Kataria +2

Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/…

physics.app-ph2019

Electron Transport across Vertical Silicon / MoS / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors

Melkamu Belete, Olof Engström, Sam Vaziri +4

Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS) and graphene are investigated with respect to the vertical current conduction mechanism. The measured…

physics.app-ph2019★ 36 cited

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Melkamu Belete, Satender Kataria, Aykut Turfanda +4

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…

physics.app-ph2019★ 26 cited

Few-Layer MoS/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection

Andreas Bablich, Daniel S. Schneider, Paul Kienitz +11

Few-layer molybdenum disulfide (FL-MoS) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown b…

physics.app-ph2019★ 130 cited

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Piotr J Cegielski, Anna Lena Giesecke, Stefanie Neutzner +11

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs…

physics.app-ph2018★ 30 cited

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Himadri Pandey, Mehrdad Shaygan, Simon Sawallich +8

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitri…

cond-mat.mtrl-sci2018★ 46 cited

Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization

M. Belete, S. Kataria, U. Koch +5

Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage…

physics.app-ph2018★ 99 cited

High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

Sarah Riazimehr, Satender Kataria, Jose-Maria González-Medina +6

Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focu…

cond-mat.mtrl-sci2018★ 184 cited

Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe films

Stefan Wagner, Chanyoung Yim, Niall McEvoy +8

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe), an excit…

cond-mat.mtrl-sci2017★ 66 cited

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Satender Kataria, Stefan Wagner, Teresa Cusati +5

Monolayer molybdenum disulphide (MoS) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS has been…

cond-mat.mtrl-sci2017★ 27 cited

Non-invasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization

Stefan Wagner, Thomas Dieing, Alba Centeno +5

Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposi…

cond-mat.mes-hall2017★ 90 cited

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Sarah Riazimehr, Satender Kataria, Rainer Bornemann +5

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such…

cond-mat.mtrl-sci2016★ 12 cited

Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

S. Kataria, Sandip Dhara, S. Dash +1

We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic modulii of heavily dopes (1E21 cm-3)…

cond-mat.mes-hall2015★ 334 cited

Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

Anderson David Smith, Karim Elgammal, Frank Niklaus +11

We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si waf…