Contact Resistance Study of Various Metal Electrodes with CVD Graphene

Abstract

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ωμm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450°C for 1 hour in argon-95% / hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.

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Cited by in corpus (7)

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• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Fabrication of comb-drive actuators for straining nanostructured suspended graphene
• Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors