Chemical vapor deposited graphene: From synthesis to applications

Abstract

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.

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• High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
• Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors
• Contact Resistance Study of Various Metal Electrodes with CVD Graphene
• Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors
• Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
• Plasma-Electric Field Controlled Growth of Oriented Graphene for Energy Storage Applications
• Dependable contact related parameter extraction in graphene-metal junctions
• All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
• Role of substrate surface morphology on the performance of graphene inks for flexible electronics
• Flexible hybrid graphene/a-Si:H multispectral photodetectors
• Self-organized Growth of Graphene Nanomesh with Increased Gas Sensitivity
• Reducing the metal-graphene contact resistance through laser-induced defects
• Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors