110 citations · 262 across the 6 of their papers we have counts for
6 papers
Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors
Himadri Pandey, Jorge Daniel Aguirre Morales, Satender Kataria +6
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) g…
Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements
Sebastian Wittmann, Stephan Pindl, Simon Sawallich +6
Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate…
Chemical vapor deposited graphene: From synthesis to applications
Satender Kataria, Stefan Wagner, Jasper Ruhkopf +7
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor dep…
Dependable contact related parameter extraction in graphene-metal junctions
Amit Gahoi, Satender Kataria, Francesco Driussi +5
The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R) are still open issues in graphene technology. Here, we demonstrate t…
All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
Himadri Pandey, Mehrdad Shaygan, Simon Sawallich +8
We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitri…
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation
Satender Kataria, Stefan Wagner, Teresa Cusati +5
Monolayer molybdenum disulphide (MoS) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS has been…