Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Abstract

Monolayer molybdenum disulphide (MoS${}_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS${}_2$ has been demonstrated using chemical vapor deposition (CVD) in a wide range of deposition temperatures from 600 °C to 1000 °C. However, a direct comparison of growth parameters and resulting material properties has not been made so far. Here, we present a systematic experimental and theoretical investigation of optical properties of monolayer MoS${}_2$ grown at different temperatures. Micro-Raman and photoluminescence (PL) studies reveal observable inhomogeneities in optical properties of the as-grown single crystalline grains of MoS${}_2$. Close examination of the Raman and PL features clearly indicate that growth-induced strain is the main source of distinct optical properties. We carry out density functional theory calculations to describe the interaction of growing MoS${}_2$ layers with the growth substrate as the origin of strain. Our work explains the variation of band gap energies of CVD-grown monolayer MoS${}_2$, extracted using PL spectroscopy, as a function of deposition temperature. The methodology has general applicability to model and predict the influence of growth conditions on strain in 2D materials.

37 pages, 6 figures, 10 figures in supporting information

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• Investigation of Growth-Induced Strain in Monolayer MoS2 Grown by Chemical Vapor Deposition
• Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization
• Effects of CVD Growth Parameters on Global and Local Optical Properties of MoS${}_2$ Monolayers
• Few-Layer MoS${}_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
• Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
• High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
• A simple KPFM-based approach for electrostatic-free topographic measurements: the case of MoS${}_2$ on SiO${}_2$