Gate-activated photoresponse in a graphene p-n junction

Abstract

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

References in corpus (17)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Ultrahigh electron mobility in suspended graphene
• Graphene Photonics and Optoelectronics
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Ultrafast graphene photodetector
• Graphene photodetectors for high-speed optical communications
• Wafer-scale synthesis and transfer of graphene films
• A Graphene Field-Effect Device
• Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
• Photo-Thermoelectric Effect at a Graphene Interface Junction
• Photocurrent imaging and efficient photon detection in a graphene transistor
• Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Nonlinear screening and ballistic transport in a graphene p-n junction
• Effect of radiation on transport in graphene

Cited by in corpus (72)

• Total light absorption in graphene
• Graphene field effect transistors as room-temperature Terahertz detectors
• CMOS-compatible graphene photodetector covering all optical communication bands
• Microcavity-integrated graphene photodetector
• Photoconductivity of biased graphene
• Dual-gated bilayer graphene hot electron bolometer
• Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
• Photocurrent in graphene harnessed by tunable intrinsic plasmons
• On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain
• Photocurrent measurements of supercollision cooling in graphene
• Atomically thin p-n junctions based on two-dimensional materials
• Third harmonic generation in graphene and few-layer graphite films
• Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
• High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
• Origin of photoresponse in black phosphorus photo-transistors
• Controlled generation of a pn-junction in a waveguide integrated graphene photodetector
• Surface plasmon polariton graphene photodetectors
• Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors
• High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene
• Photocurrent as a multi-physics diagnostic of quantum materials
• Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors
• Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene
• Near-field photocurrent nanoscopy on bare and encapsulated graphene
• Chemical vapor deposited graphene: From synthesis to applications
• Theory of the plasma-wave photoresponse of a gated graphene sheet
• Photo Thermal Effect Graphene Detector Featuring 105 Gbit s-1 NRZ and 120 Gbit s-1 PAM4 Direct Detection
• Hot-carrier photocurrent effects at graphene-metal interfaces
• Graphene photodetector integrated on a photonic crystal defect waveguide
• High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
• Ultrafast electronic read-out of diamond NV centers coupled to graphene
• Extraordinary linear dynamic range in laser-defined functionalized graphene photodetectors
• Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides
• Phonon-mediated mid-infrared photoresponse of graphene
• Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors
• Shockley-Ramo theorem and long-range photocurrent response in gapless materials
• Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides
• Graphene photodetectors with a bandwidth larger than 76 GHz fabricated in a 6 inch wafer process line
• Scattering of Graphene plasmons by defects in the graphene sheet
• Nano-imaging photoresponse in a moiré unit cell
• THz detection with epitaxial graphene field effect transistors on silicon carbide
• Graphene-based light sensing: fabrication, characterisation, physical properties and performance
• Transient absorption and photocurrent microscopy show hot electron supercollisions describe the rate-limiting relaxation step in graphene
• Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors
• Photo-Nernst current in graphene
• Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride
• Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials
• Substrate Sensitive Mid-Infrared Photoresponse in Graphene
• Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures
• Theory of Strain-Induced Confinement in Transition Metal Dichalcogenide Monolayers
• Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene pn Junction
• Dependable contact related parameter extraction in graphene-metal junctions
• Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
• A Graphene-based Hot Electron Transistor
• Polarization dependence of photocurrent in a metal-graphene-metal device
• Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
• Zero-bias photodetection in 2d materials via geometric design of contacts
• Optimizing the photothermoelectric effect in graphene
• Identifying signatures of photothermal current in a double-gated semiconducting nanotube
• Chemical Potential Fluctuations in Topological Insulator (Bi${}_{0.5}$Sb${}_{0.5}$)${}_2$Te${}_3$ Films Visualized by Photocurrent Spectroscopy
• Atomic configuration controlled photocurrent in van der Waals homostructures
• Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector
• Nonlinear, anisotropic and giant photoconductivity in intrinsic and doped graphene
• Graphene Oxide Photoreduction Recovers Graphene Hot Electron Cooling Dynamics
• Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
• Radiation-induced quantum Fano-type resonances in the transport of $N$-$P$-$N$ graphene based junctions
• High-frequency rectification in graphene lateral p-n junctions
• Ultrahigh-Gain Phototransistors Based on Graphene-MoS2 Heterostructures
• Photocurrent Enhancement of Graphene Photodetectors by Photon Tunneling of Light into Surface Plasmons
• Multiple perfectly-transmitting states of a single-level at strong coupling
• Thermoelectric detection of propagating plasmons in graphene
• Enhanced Terahertz Photoresponse via Acoustic Plasmon Cavity Resonances in Scalable Graphene
• Extrinsic thermoelectric response of coherent conductors