High-frequency rectification in graphene lateral p-n junctions
arXiv:1711.03803 · doi:10.1063/1.5013100
Abstract
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
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