activity
20152017
most citedLinear magnetoresistance in compensated graphene bilayer

40 citations · 50 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2017★ 5 cited

High-frequency rectification in graphene lateral p-n junctions

Yu. B. Vasilyev, G. Yu. Vasileva, S. Novikov +3

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultrav…

cond-mat.mes-hall2016★ 4 cited

Strongly temperature dependent resistance of meander-patterned graphene

G. Yu. Vasileva, D. Smirnov, Yu. B. Vasilyev +5

We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. T…

cond-mat.mes-hall2016

Influence of disordered edges on transport properties in graphene

D. Smirnov, G. Yu. Vasileva, J. C. Rode +4

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed fo…

cond-mat.mes-hall2015★ 40 cited

Linear magnetoresistance in compensated graphene bilayer

G. Yu. Vasileva, D. Smirnov, Yu. L. Ivanov +8

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears…

cond-mat.mes-hall2015★ 1 cited

Magnetoresistance of monolayer graphene with short-range scattering

G. Yu. Vasileva, P. S. Alekseev, Yu. B. Vasilyev +4

We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior…