Current-voltage characteristics of graphene devices: interplay between Zener-Klein tunneling and defects
arXiv:1003.2072 · doi:10.1103/PhysRevB.82.045416
Abstract
We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I \propto V^α, with 1< α<= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.
5 pages, 3 figures
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- Spectra of electronic excitations in graphene near Coulomb impurities
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