Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
arXiv:2109.00773 · doi:10.1103/PhysRevApplied.16.064054
Abstract
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation.
9 pages, 7 figures
References in corpus (11)
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Strong Coulomb drag and broken symmetry in double-layer graphene
- Screening and interlayer coupling in multilayer graphene field-effect transistors
- Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures
- Reentrance effect in a graphene n-p-n junction coupled to a superconductor
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Plasmonic Instabilities in Two-dimensional Electron Channels of Variable Width
- Effect of Coulomb scattering on graphene conductivity
- S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
- Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection