Effect of self-consistent electric field on characteristics of graphene p-i-n tunneling transit-time diodes

Abstract

We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the small-signal ac frequency-dependent admittance as functions of the GTUNNETT structural parameters, in particular, the number of graphene layers and the dielectric constant of the surrounding media. It is shown that the admittance real part can be negative in a certain frequency range. As revealed, if the i-section somewhat shorter than one micrometer, this range corresponds to the terahertz frequencies. Due to the effect of the self-consistent electric field, the behavior of the GTUNNETT admittance in the range of its negativity of its real part is rather sensitive to the relation between the number of graphene layers and dielectric constant. The obtained results demonstrate that GTUNNETTs with optimized structure can be used in efficient terahertz oscillators.

8 pages, 9 figures

References in corpus (10)

• The electronic properties of graphene
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Gate-tuning of graphene plasmons revealed by infrared nano-imaging
• Optical nano-imaging of gate-tuneable graphene plasmons
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
• Dirac electronic states in graphene systems: Optical spectroscopy studies
• Hydrodynamic model for electron-hole plasma in graphene
• Reentrance effect in a graphene n-p-n junction coupled to a superconductor
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction

Cited by in corpus (7)

• Double injection in graphene p-i-n structures
• Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
• S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
• Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
• Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes
• Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling