Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

Abstract

We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.

8 pages, 4 figures

References in corpus (9)

• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Space-time dispersion of graphene conductivity
• Strong Coulomb drag and broken symmetry in double-layer graphene
• Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene
• Plasmonic Instabilities in Two-dimensional Electron Channels of Variable Width
• Effect of Coulomb scattering on graphene conductivity
• Graphene vertical hot-electron terahertz detectors
• S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
• Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

Cited by in corpus (2)

• Terahertz plasmonic resonances in coplanar graphene nanoribbon structures
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling