S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

Abstract

We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n${}^{+}$-i-n-n${}^{+}$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching devices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for an effective frequency multiplication and detection of terahertz radiation.

11 pages, 6 figures

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Cited by in corpus (6)

• Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection
• Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
• Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity
• Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes
• Terahertz plasmonic resonances in coplanar graphene nanoribbon structures
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling