Electrically-induced n-i-p junctions in multiple graphene layer structures

Abstract

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n- and p-regions in the electrically-induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically-induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectron devices.

7 pages, 6 figures

References in corpus (12)

• Ultrafast graphene photodetector
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Transport measurements across a tunable potential barrier in graphene
• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
• How perfect can graphene be?
• Dirac electronic states in graphene systems: Optical spectroscopy studies
• Nonlinear screening and ballistic transport in a graphene p-n junction
• Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides
• Terahertz and Infrared Photodetection using p-i-n Multiple-Graphene-Layer Structures
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction

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• Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
• Gate-Voltage Tunability of Plasmons in Single and Multi-layer Graphene Structures: Analytical Description and Concepts for Terahertz Devices
• S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
• Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
• Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles