Terahertz and Infrared Photodetection using p-i-n Multiple-Graphene-Layer Structures
arXiv:0912.0339 · doi:10.1063/1.3327441
Abstract
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed device model, we calculate the detector dc responsivity and detectivity as functions of the number of graphene layers and geometrical parameters and show that the dc responsivity and detectivity can be fairly large, particularly, at the lower end of the THz range at room temperatures. Due to relatively high quantum efficiency and low thermogeneration rate, the photodetectors under consideration can substantially surpass other THz and IR detectors. Calculations of the detector responsivity as a function of modulation frequency of THz and IR radiation demonstrate that the proposed photodetectors are very fast and can operate at the modulation frequency of several tens of GHz.
7 pages, 4 figures
References in corpus (13)
- The electronic properties of graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Ultrafast graphene photodetector
- Space-time dispersion of graphene conductivity
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Transport measurements across a tunable potential barrier in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
- How perfect can graphene be?
- Slow imbalance relaxation and thermoelectric transport in graphene
- Nonlinear screening and ballistic transport in a graphene p-n junction
- Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
Cited by in corpus (17)
- Unique prospects of graphene-based THz modulators
- Terahertz Science and Technology of Carbon Nanomaterials
- High performance bilayer-graphene Terahertz detectors
- Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene
- Double injection in graphene p-i-n structures
- Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
- Electrically-induced n-i-p junctions in multiple graphene layer structures
- Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
- Graphene vertical hot-electron terahertz detectors
- Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures
- Infrared photodetectors based on graphene van der Waals heterostructures
- Interplay of intra- and interband absorption in a disordered graphene
- Effect of doping on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers
- Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation
- Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
- Modulation characteristics of uncooled graphene photodetectors
- Limiting performance of graphene bilayer sub-terahertz detectors at large induced band gap