Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles
arXiv:1108.2077 · doi:10.1063/1.3656712
Abstract
We evaluate recombination of electrons and holes in optically pumped graphene associated with the interband tunneling between electron-hole puddles and calculate the recombination rate and time. It is demonstrated that this mechanism can be dominant in a wide range of pumping intensities. We show that the tunneling recombination rate and time are nonmonotonic functions of the quasi-Fermi energies of electrons and holes and optical pumping intensity. This can result in hysteresis phenomena.
4 pages, 3 figures
References in corpus (13)
- The electronic properties of graphene
- Ultrafast graphene photodetector
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
- First direct observation of a nearly ideal graphene band structure
- Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
- Slow imbalance relaxation and thermoelectric transport in graphene
- Dirac electronic states in graphene systems: Optical spectroscopy studies
- Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides
- Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures
- Reentrance effect in a graphene n-p-n junction coupled to a superconductor
- Electrically-induced n-i-p junctions in multiple graphene layer structures
- Electron-hole coexistence in disordered graphene probed by high-field magneto-transport