Reentrance effect in a graphene n-p-n junction coupled to a superconductor

Abstract

We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n junction initially increases upon lowering the temperature, while the coherence time of the electron-hole pairs is still less than their lifetime, but then drops back again when the coherence time exceeds the lifetime. This reentrance effect, known from diffusive conductors and ballistic quantum dots, provides a method to detect phase coherent Klein tunneling of electron-hole pairs.

arXiv comment4 pages, 3 figures

References in corpus (15)

• Chiral tunneling and the Klein paradox in graphene
• Bipolar supercurrent in graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Quantum dots in graphene
• Diagrammatic method of integration over the unitary group, with applications to quantum transport in mesoscopic systems
• Novel Circuit Theory of Andreev Reflection
• Diffusive conductors as Andreev interferometers
• On electron (anti)localization in graphene
• Re-entrance of the metallic conductance in a mesoscopic proximity superconductor
• Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene
• Andreev Conductance of Chaotic and Integrable Quantum Dots
• reentrance effect in normal-metal/superconducting hybrid loops
• Andreev reflection eigenvalue density in mesoscopic conductors
• Energy dependence of current noise in double-barrier normal-superconducting structures

Cited by in corpus (25)

• The electronic properties of graphene
• Andreev reflection and Klein tunneling in graphene
• Nonlinear screening and ballistic transport in a graphene p-n junction
• Transport Through Andreev Bound States in a Graphene Quantum Dot
• Effect of disorder on a graphene p-n junction
• Proximity coupling in superconductor-graphene heterostructures
• Andreev reflection in graphene nanoribbons
• Switching and Rectification of a Single Light-sensitive Diarylethene Molecule Sandwiched between Graphene Nanoribbons
• Microscopic theory of the proximity effect in superconductor-graphene nanostructures
• Nanometer-scale lateral p-n junctions in graphene/$\alpha$-RuCl${}_3$ heterostructures
• Dirac Green's function approach to graphene-superconductor junctions with well defined edges
• The focusing of electron flow in a bipolar Graphene ribbon with different chiralities
• Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
• Proximity induced interface bound states in superconductor-graphene junctions
• Selective focusing of electrons and holes in a graphene-based superconducting lens
• Tunable Supercurrent at the Charge Neutrality Point via Strained Graphene Junctions
• Current-voltage characteristics of a graphene nanoribbon field-effect transistor
• Kondo screening of Andreev bound states in an N-QD-S system
• Effect of self-consistent electric field on characteristics of graphene p-i-n tunneling transit-time diodes
• Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
• Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles
• Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity
• Graphene Andreev Billiards
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling
• Proximity-induced superconductivity in Landau-quantized graphene monolayers